Impact of interfacial chemistry on adhesion and electromigration in Cu interconnects

被引：0

作者：

Zhou, Y ^{[1
]}

Scherban, T ^{[1
]}

Xu, GH ^{[1
]}

He, J ^{[1
]}

Miner, B ^{[1
]}

Jan, CH ^{[1
]}

Ott, A ^{[1
]}

O'Loughlin, J ^{[1
]}

Ingerly, D ^{[1
]}

Leu, J ^{[1
]}

机构：

[1] Intel Corp, Log Technol Dev, Technol Dev Qual & Reliabil, Hillsboro, OR 97124 USA

来源：

ADVANCED METALLIZATION CONFERENCE 2004 (AMC 2004) | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of etch-stop (ES)/Cu interfacial chemistry on adhesion and electromigration (EM) has been systematically investigated by varying Cu surface chemistry, etch-stop film chemistry, metal capping layers, and thermal annealing conditions. Adhesion and EM improvement directly correlate with reducing interfacial oxygen for all the systems studied. While the adhesion of freshly deposited ES films strongly depends on the Cu surface chemistry and ES deposition conditions, the hermeticity of the ES film significantly impacts the film and interface chemistry during subsequent processing and thermal cycles, consequently affecting the long term stability of adhesion and electromigration performance. The mechanism for the correlation and material properties governing the interfacial chemistry will be discussed.

引用

页码：189 / 199

页数：11

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