In situ SiN passivation of AIGaN/GaN HEMTs by molecular beam epitaxy

被引：11

作者：

Heying, B. ^{[1
]}

Smorchkova, I. P. ^{[1
]}

Coffie, R. ^{[1
]}

Gambin, V. ^{[1
]}

Chen, Y. C. ^{[1
]}

Sutton, W. ^{[1
]}

Lam, T. ^{[1
]}

Kahr, M. S. ^{[1
]}

Sikorski, K. S. ^{[1
]}

Wojtowicz, M. ^{[1
]}

机构：

[1] Northrop Grumman, Redondo Beach, CA 90278 USA

来源：

ELECTRONICS LETTERS | 2007年 / 43卷 / 14期

关键词：

ALGAN/GAN HEMTS; GANHEMTS;

D O I：

10.1049/el:20071211

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To improve the passivation process of AlGaN/GaN HEMTs, a unique passivation process has been developed in which an SiN passivation layer is deposited by MBE immediately following opitaxial growth of the HEMT structure. The effectiveness of this in situ passivation process is evaluated by comparing devices fabricated with this process to the conventional PECVD passivation process in which the SiN is deposited after gate metallisation. The improved material quality and the protection offered by the MBE-grown SiN may contribute to the significantly reduced dispersion and improved power performance measured for the wafer fabricated with the in situ passivation process.

引用

收藏

页码：779 / 780

页数：2

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