(Pb,Sr)TiO3 thin films for a ULSI DRAM capacitor prepared by liquid source misted chemical deposition

被引：28
作者：
Chung, HJ
Kim, JH
Woo, SI
机构：
[1] Korea Adv Inst Sci & Technol, Dept Chem Engn, Yusong Gu, Taejon 305701, South Korea
[2] Samsung Elect Co Ltd, Semicond R&D, Kyungki Do 449900, South Korea
来源：
CHEMISTRY OF MATERIALS | 2001年 / 13卷 / 05期
关键词：
D O I：
10.1021/cm0008157
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
(Pb,Sr)TiO3 (PST) thin films have been successfully grown on Pt-coated Si(100) wafers by the Liquid source misted chemical deposition method. The PST thin film has high crystallinity, a smooth surface, and uniform elemental composition. Electrical measurements revealed the S PST thin film has a high dielectric constant, low dielectric loss, and good insulating properties. These results indicate that the PST thin film is a promising material for a ULSI DRAM capacitor and other microelectronic device applications.
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页码：1441 / +
页数：4
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