A Low-Cost High-Performance Transient Voltage Sensing Circuit for SiC MOSFETs

被引：1
|
作者：
Yang, Chengzi [1 ]
Li, Huaqing [1 ]
Xu, Yunfei [2 ]
Yu, Longyang [1 ]
Jiang, Yongbin [1 ]
Wang, Laili [1 ]
Pei, Yunqing [1 ]
Zhang, Hong [1 ]
Gan, Yongmei [1 ]
机构：
[1] Xi An Jiao Tong Univ, Power Elect & Renewable Energy Res Ctr, Xian, Peoples R China
[2] State Key Lab Adv Power Transmiss Technol, Beijing 102209, Peoples R China
来源：
2020 IEEE 9TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE (IPEMC2020-ECCE ASIA) | 2020年
关键词：
SiC MOSFET; voltage sensing circuit; high voltage; high bandwidth;
D O I：
10.1109/IPEMC-ECCEAsia48364.2020.9367817
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) present good features on its switching speed, operation voltage and will future improve the performance of power electronic devices in medium and high power. However, it also puts forward new requirements for voltage measurement, which is high bandwidth under high voltage conditions. This paper proposes a high voltage and high bandwidth voltage sensing circuit that uses the characteristics of the same resistor with the same parasitic capacitance to meet the high frequency constraint of voltage sensing circuit. By using the proposed circuit in conjunction with an appropriate load compensation method, the withstand voltage rating of low-voltage and high-bandwidth passive probes can be extended to required levels. The performance of the voltage measurement is experimentally verified and compared.
引用
收藏
页码：966 / 970
页数：5
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