Facile synthesis of ZnS quantum dots at room temperature for ultra-violet photodetector applications

被引:26
作者
Li, Rujie [1 ,2 ,3 ]
Tang, Libin [1 ,2 ,3 ]
Zhao, Qing [1 ]
Teng, Kar Seng [4 ]
Lau, Shu Ping [5 ]
机构
[1] Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
[2] Kunming Inst Phys, Kunming 650223, Yunnan, Peoples R China
[3] Yunnan Key Lab Adv Photoelect Mat & Devices, Kunming, Yunnan, Peoples R China
[4] Swansea Univ, Coll Engn, Bay Campus,Fabian Way, Swansea SA1 8EN, W Glam, Wales
[5] Hong Kong Polytech Univ, Dept Appl Phys, Hung Hom, Kowloon, Hong Kong, Peoples R China
基金
中国国家自然科学基金;
关键词
Semiconductor Quantum dots (QDs); Zinc sulfide (ZnS); Optical property photodetector; OPTICAL-PROPERTIES; NANOCRYSTALS; PERFORMANCE; ULTRAVIOLET; EMISSION;
D O I
10.1016/j.cplett.2020.137127
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Zinc sulfide (ZnS) quantum dots (QDs) were synthesized using a facile, low-cost and environmentally friendly method at room temperature and ambient pressure. The structural, optical and electrical properties of the asprepared ZnS QDs were investigated. The monodispersed crystalline ZnS QDs with an average size of 3.8 nm has been prepared, an absorption peak at 292 nm in the ultra-violet (UV) range was observed. The maximum responsivity (R) and detectivity (D*) of the ZnS QDs based photodetector under 365 nm UV light illumination were 5.8 A W-1 and 1.97 x 10(13) Jones, respectively, which shows important potential application in UV detection.
引用
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页数:5
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