Spin Hall magnetoresistance in Ta/CoFe2O4 nanostructures

被引：6

作者：

Hui, Ya-Juan ^{[1
,2
]}

Cheng, Wei-Ming ^{[1
,2
]}

Zhang, Zhao-Bing ^{[2
]}

Ji, Hong-Kai ^{[2
]}

Cheng, Xiao-Min ^{[1
,2
]}

You, Long ^{[2
]}

Miao, Xiang-Shui ^{[1
,2
,3
]}

机构：

[1] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China

[2] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China

[3] Huazhong Univ Sci & Technol, Wuhan Natl High Magnet Field Ctr, Wuhan 430074, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2016年 / 9卷 / 07期

基金：

中国国家自然科学基金;

关键词：

ROOM-TEMPERATURE; TUNNEL-JUNCTIONS; FILMS;

D O I：

10.7567/APEX.9.073006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spin Hall magnetoresistance (SMR) has been investigated in Ta/CoFe2O4 nanostructures grown on different substrates. Spin currents in CoFe2O4 films are electrically detected in adjacent Ta layers owing to inverse spin Hall effects. The sign of the magnetic-field-dependent resistivity signal shows different polarities along different axes, showing different spin-dependent electron transports. A cosinelike curve of the angular dependence signal with opposite polarity is observed in two orthogonal magnetization planes, whereas a basic line is observed in another plane, revealing the spin accumulation phenomenon. The roughness of the CoFe2O4 surface tuned by substrate strains is responsible for the extent of spin accumulations and the strength of the SMR signal in the nanostructures. (C) 2016 The Japan Society of Applied Physics

引用

页数：4

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