A Radiation-Hardened Non-redundant Flip-Flop, Stacked Leveling Critical Charge Flip-Flop in a 65 nm Thin BOX FD-SOI Process

被引:0
作者
Yamaguchi, Junki [1 ]
Furuta, Jun [1 ]
Kobayashi, Kazutoshi [1 ]
机构
[1] Kyoto Inst Technol, Kyoto, Japan
来源
2015 15TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) | 2015年
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We propose SLCCFF which is a radiation hardened non-redundant flip-flop in 65 nm SOTB (Silicon On Thin BOX) process. We measured its soft error rates by neutron irradiation. SLCCFF has the stacked structure to prevent soft errors on SOI processes while maintaining smaller delay and power overhead than conventional stacked FFs. Experimental results show that the SLCCFF is about 27x stronger than the standard DFF at 0.4V power supply in the SOTB process. It is about 1000x stronger compared with the standard DFF in the bulk process.
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