Microstructure examination of copper wafer bonding

被引：53

作者：

Chen, KN ^{[1
]}

Fan, A ^{[1
]}

Reif, R ^{[1
]}

机构：

[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2001年 / 30卷 / 04期

关键词：

wafer bonding; copper; TEM; EDS; oxidation;

D O I：

10.1007/s11664-001-0039-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The microstructure morphologies and oxide distribution of copper bonded wafers were examined by means of transmission electron microscopy (TEM) and energy dispersion spectrometer (EDS). Cu wafers exhibit good bond properties when wafer contact occurs at 400 degreesC/4000 mbar for 30 min, followed by an anneal at 400 degreesC for 30 min in N-2 ambient atmosphere. The distribution of different defects showed that the bonded layer became a homogeneous layer under these bonding conditions. The oxidation distribution in the bonded layer is uniform and sparse. Possible bonding mechanisms are discussed.

引用

页码：331 / 335

页数：5

共 9 条

[1] SILICON FUSION BONDING FOR FABRICATION OF SENSORS, ACTUATORS AND MICROSTRUCTURES [J].

BARTH, PW .

SENSORS AND ACTUATORS A-PHYSICAL, 1990, 23 (1-3) :919-926

[2]

BENGTSSON S, 1992, J ELECTRON MATER, V21, P841

[3]

CHANG CY, 1996, ULSI TECHNOLOGY, P673

[4] Copper wafer bonding [J].

Fan, A ;

Rahman, A ;

Reif, R .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 1999, 2 (10) :534-536

[5]

FAN A, IN PRESS P EL SOC SP

[6] TANTALUM AS A DIFFUSION BARRIER BETWEEN COPPER AND SILICON - FAILURE MECHANISM AND EFFECT OF NITROGEN ADDITIONS [J].

HOLLOWAY, K ;

FRYER, PM ;

CABRAL, C ;

HARPER, JME ;

BAILEY, PJ ;

KELLEHER, KH .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (11) :5433-5444

[7]

HUFF MH, 1991, US FOR SERV T R PNW, V285, P177

[8] WAFER BONDING FOR SILICON-ON-INSULATOR TECHNOLOGIES [J].

LASKY, JB .

APPLIED PHYSICS LETTERS, 1986, 48 (01) :78-80

[9]

Takagi H, 1997, TRANSDUCERS 97 - 1997 INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS AND ACTUATORS, DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2, P657, DOI 10.1109/SENSOR.1997.613737

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