Hot-Carrier Stress Effect on a CMOS 65-nm 60-GHz One-Stage Power Amplifier

被引：24
|
作者：
Quemerais, Thomas [1 ,2 ]
Moquillon, Laurence [1 ]
Huard, Vincent [1 ]
Fournier, Jean-Michel [2 ]
Benech, Philippe [2 ]
Corrao, Nicolas [2 ]
Mescot, Xavier [2 ]
机构：
[1] STMicroelectronics, F-38920 Crolles, France
[2] UMR INPG UJF US CNRS, IMEP LHAC, F-38016 Grenoble, France
来源：
IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 09期
关键词：
CMOS millimeter-wave (MMW) power amplifier (PA); hot-carrier stress; reliability; 65-nm technology; PERFORMANCE DEGRADATION;
D O I：
10.1109/LED.2010.2055535
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of RF hot-carrier stress on the characteristics of 60-GHz power amplifiers (PAs) on a CMOS 65-nm process are investigated, for the first time, in this letter. A reliability study is made on a one-stage PA to validate an aging model and the degradation explanation. A drop of 16% of the gain, 17% of the 1-dB output compression point (OCP1dB), and 17% of the P-sat are measured at 60 GHz after 50 h of stress under V-dd = 1.65 V with P-in = 0 dBm and Vdd = 1.9 V with P-in = -10 dBm at 60-GHz frequency.
引用
收藏
页码：927 / 929
页数：3
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