Hot-Carrier Stress Effect on a CMOS 65-nm 60-GHz One-Stage Power Amplifier

被引：24

作者：

Quemerais, Thomas ^{[1
,2
]}

Moquillon, Laurence ^{[1
]}

Huard, Vincent ^{[1
]}

Fournier, Jean-Michel ^{[2
]}

Benech, Philippe ^{[2
]}

Corrao, Nicolas ^{[2
]}

Mescot, Xavier ^{[2
]}

机构：

[1] STMicroelectronics, F-38920 Crolles, France

[2] UMR INPG UJF US CNRS, IMEP LHAC, F-38016 Grenoble, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 09期

关键词：

CMOS millimeter-wave (MMW) power amplifier (PA); hot-carrier stress; reliability; 65-nm technology; PERFORMANCE DEGRADATION;

D O I：

10.1109/LED.2010.2055535

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of RF hot-carrier stress on the characteristics of 60-GHz power amplifiers (PAs) on a CMOS 65-nm process are investigated, for the first time, in this letter. A reliability study is made on a one-stage PA to validate an aging model and the degradation explanation. A drop of 16% of the gain, 17% of the 1-dB output compression point (OCP1dB), and 17% of the P-sat are measured at 60 GHz after 50 h of stress under V-dd = 1.65 V with P-in = 0 dBm and Vdd = 1.9 V with P-in = -10 dBm at 60-GHz frequency.

引用

页码：927 / 929

页数：3

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