A Raman spectroscopic study of defects in Bi4Ge3O12 crystals

被引：0

作者：

Rafailov, PM

Milenov, TI

Veleva, MN

Thomsen, C

Gospodinov, MM

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2005年 / 7卷 / 01期

关键词：

Raman spectroscopy; phonons; lattice defects;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We performed spatially resolved polarized Raman measurements on a Czochralski grown Bi4Ge3O12 crystal, and observed significant spot-dependent changes in the relative scattering intensity of some A(1), E and F-2 modes. In view of the different selection rules for these modes, such behaviour implies that there are regions with different crystal orientations. We ascribe this to the presence of two-dimensional structural defects with high concentrations and strongly non-uniform distributions.

引用

页码：473 / 476

页数：4

共 6 条

[1]

CARDONA M, 1982, LIGHT SCATTERING SOL, V2, P40

[2] PHOTOCHROMIC BEHAVIOR OF DOPED BI4GE3O12 SINGLE-CRYSTAL SCINTILLATORS [J].