Structure and morphology of Ge nanowires on Si (001): Importance of the Ge islands on the growth direction and twin formation

被引：4

作者：

Boudaa, F. ^{[1
]}

Blanchard, N. P. ^{[2
]}

Descamps-Mandine, A. ^{[1
]}

Benamrouche, A. ^{[1
]}

Gendry, M. ^{[1
]}

Penuelas, J. ^{[1
]}

机构：

[1] Univ Lyon, Ecole Cent Lyon, INL, F-69134 Ecully, France

[2] Univ Lyon 1, CNRS, ILM, UMR5306, F-69622 Villeurbanne, France

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 05期

关键词：

MOLECULAR-BEAM EPITAXY; GERMANIUM NANOWIRES; MECHANISM; SILICON;

D O I：

10.1063/1.4907684

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Understanding and controlling the structural properties of Ge nanowires are important for their current and future use in technological applications. In this study, the initial stages of the heteroepitaxial growth of Ge nanowires on Si(001) via the Au catalyzed vapor-liquid-solid (VLS) method are investigated. We observe a Ge island located at the base of each nanowire. We propose that these islands are formed by the VLS mechanism and initiate the nanowire growth. Analysis of the islands morphology helps to explain the < 011 > growth direction commonly observed for Ge nanowires. Moreover, our observations provide an insight into the formation of twins that propagate along the growth direction. (C) 2015 AIP Publishing LLC.

引用

页数：5