Radio-frequency operation of a double-island single-electron transistor

被引：7

作者：

Brenner, R ^{[1
]}

Buehler, TM ^{[1
]}

Reilly, DJ ^{[1
]}

机构：

[1] Univ New S Wales, Sch Phys, Ctr Quantum Comp Technol, Sydney, NSW 2052, Australia

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 97卷 / 03期

基金：

澳大利亚研究理事会;

关键词：

D O I：

10.1063/1.1833574

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present results on a double-island single-electron transistor (DISET) operated at radio frequency (rf) for the fast and highly sensitive detection of charge motion in the solid state. Using an intuitive definition for the charge sensitivity, we compare a DISET to a conventional single-electron transistor (SET). We find that a DISET can be more sensitive than a SET for identical, minimum device resistances in the Coulomb blockade regime. This is of particular importance for rf operation, where ideal impedance matching to 50-Omega transmission lines is only possible for a limited range of device resistances. We report a charge sensitivity of 5.6x10(-6) e/rootHz for a rf-DISET, together with a demonstration of the single-shot detection of small (less than or equal to0.1e) charge signals on microsecond time scales. (C) 2005 American Institute of Physics.

引用

页数：5

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