Effects of nitrogen vacancy on optical properties of nitride semiconductors

被引：36

作者：

Yamaguchi, E ^{[1
]}

Junnarkar, MR ^{[1
]}

机构：

[1] Nippon Telegraph & Tel Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

band structure; deep level; Green's function; Stokes shift; localization; nitride semiconductor;

D O I：

10.1016/S0022-0248(98)00202-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Band structures and deep levels are calculated for both the cubic and hexagonal nitride semiconductors, using the sp(3)s* tight-binding formulation and the Green's function technique. An anti-bonding s-like state produced by nitrogen vacancy is predicted to appear at 0.3 eV below the conduction-band (CB) edge for GaN, which gets shallower and then resonant with the CB for InxGa1-xN with In content (x), The theoretical results can provide a new and consistent model for explaining anomalous optical properties in nitride semiconductors. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：570 / 574

页数：5

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