Elaboration of thermal wet oxidation of AlAs/GaAs distributed bragg reflectors

被引：0

作者：

Pucicki, D ^{[1
]}

Korbutowicz, R ^{[1
]}

Kania, A ^{[1
]}

Adamiak, B ^{[1
]}

机构：

[1] Wroclaw Tech Univ, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland

来源：

ASDAM 2004: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The incorporation of oxidized DBR or single AlAs layers into optoelectronics devices with vertical resonant cavity give intense profit due to large difference of refractive index between GaAs and oxidized AlAs layers. Influence of the thermal wet oxidation process parameters on AlAs/GaAs Distributed Bragg Reflectors (DBR) structural and optical properties has been investigated.

引用

页码：179 / 181

页数：3

共 4 条

[1] BUGAJSKI M, ELTE 2000
[2] AlxGa1-xAs native-oxide-based distributed Bragg reflectors for vertical cavity surface emitting lasers
Evans, PW
Wierer, JJ
Holonyak, N
[J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (10) : 5436 - 5440
[3] Sze S.M., 2013, SEMICONDUCTOR DEVICE
[4] AlAs oxidation process in GaAs/AlGaAs/AlAs heterostructures grown by molecular beam epitaxy on GaAs (n11)A substrates
Vaccaro, PO
Koizumi, K
Fujita, K
Ohashi, T
[J]. MICROELECTRONICS JOURNAL, 1999, 30 (4-5) : 387 - 391

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