Valence-band offset of the lattice-matched β-FeSi2(100)/Si(001) heterostructure -: art. no. 033311

被引：21

作者：

Al-Allak, HM ^{[1
]}

Clark, SJ ^{[1
]}

机构：

[1] Univ Durham, Dept Phys, Sci Labs, Durham DH1 3LE, England

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.63.033311

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ab initio pseudopotential calculations have been carried out to determine the valence-band offset across the interface of FeSi2 grown on a silicon substrate. The structure of the beta -FeSi2[010]parallel to Si < 110 > matching interface is also obtained. The lattice parameters of the beta -FeSi2 epilayer defining the interfacial plane were constrained to those of silicon. The valence-band offset was found to be about 0.39 eV with the Si side of the interface having the higher potential.

引用

页数：4

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