DC superconducting quantum interference devices fabricated using bicrystal grain boundary junctions in Co-doped BaFe2As2 epitaxial films

被引：40

作者：

Katase, Takayoshi ^{[1
]}

Ishimaru, Yoshihiro ^{[2
]}

Tsukamoto, Akira ^{[2
]}

Hiramatsu, Hidenori ^{[3
]}

Kamiya, Toshio ^{[1
]}

Tanabe, Keiichi ^{[2
]}

Hosono, Hideo ^{[1
,3
]}

机构：

[1] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Int Superconduct Technol Ctr, Superconduct Res Lab, Koto Ku, Tokyo 1350062, Japan

[3] Tokyo Inst Technol, Frontier Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 2010年 / 23卷 / 08期

基金：

日本学术振兴会;

关键词：

THIN-FILMS; NOISE; VOLTAGE;

D O I：

10.1088/0953-2048/23/8/082001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

DC superconducting quantum interference devices (dc-SQUIDs) were fabricated in Co-doped BaFe2As2 epitaxial films on (La, Sr)(Al, Ta)O-3 bicrystal substrates with 30 degrees misorientation angles. The 18 x 8 mu m(2) SQUID loop with an estimated inductance of 13 pH contained two 3 mu m wide grain boundary junctions. The voltage-flux characteristics clearly exhibited periodic modulations with Delta V = 1.4 mu V at 14 K, while the intrinsic flux noise of dc-SQUIDs was 7.8 x 10(-5) Phi(0) Hz(-1/2) above 20 Hz. The rather high flux noise is mainly attributed to the small voltage modulation depth which results from the superconductor-normal-metal-superconductor junction nature of the bicrystal grain boundary.

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页数：4

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