Determination of optical constants of Si/ZnO polycrystalline nanocomposites by spectroscopic ellipsometry

被引:6
作者
García-Serrano, J
Koshizaki, N
Sasaki, T
Martínez-Montes, G
Pal, U
机构
[1] Univ Autonoma Puebla, Inst Fis, Puebla 72570, Mexico
[2] Univ Autonoma Estado Hidalgo, CIMyM, Pachuca 42074, Hidalgo, Mexico
[3] Natl Inst Adv Ind Sci & Technol, Nanoarchitecton Res Ctr, Tsukuba, Ibaraki 3058565, Japan
关键词
D O I
10.1557/JMR.2001.0487
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The optical constants of Si/ZnO composite Films grown on quartz glass substrates were determined in the spectral range 1.5-5.0 eV by spectroscopic ellipsometry using a rotating-analyzer ellipsometer. The structure of the sample,,, was modeled by a two-phase (substrate-film) model, and the optical functions of the film were parameterized through different effective medium approximations. The results allowed us to estimate the microstructural film parameters, such as film thickness, the volume fractions of each of the constituents, and optical constants.
引用
收藏
页码:3554 / 3559
页数:6
相关论文
共 12 条
[1]  
Azzam R.M.A., 1997, ELLIPSOMETRY POLARIZ
[2]   PHOTOEMISSION-STUDY OF SIOX (0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 2) ALLOYS [J].
BELL, FG ;
LEY, L .
PHYSICAL REVIEW B, 1988, 37 (14) :8383-8393
[4]   OPTICAL-PROPERTIES AND DAMAGE ANALYSIS OF GAAS SINGLE-CRYSTALS PARTLY AMORPHIZED BY ION-IMPLANTATION [J].
ERMAN, M ;
THEETEN, JB ;
CHAMBON, P ;
KELSO, SM ;
ASPNES, DE .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :2664-2671
[5]   OPTICAL DISPERSION-RELATIONS FOR AMORPHOUS-SEMICONDUCTORS AND AMORPHOUS DIELECTRICS [J].
FOROUHI, AR ;
BLOOMER, I .
PHYSICAL REVIEW B, 1986, 34 (10) :7018-7026
[6]   FAR ULTRAVIOLET REFLECTANCE OF II-VI COMPOUNDS AND CORRELATION WITH PENN-PHILLIPS GAP [J].
FREEOUF, JL .
PHYSICAL REVIEW B, 1973, 7 (08) :3810-3830
[7]   ANALYSIS OF PHOTOEMISSION IN AMORPHOUS SIOX AND SINX ALLOYS IN TERMS OF A CHARGE-TRANSFER MODEL [J].
HASEGAWA, S ;
HE, L ;
INOKUMA, T ;
KURATA, Y .
PHYSICAL REVIEW B, 1992, 46 (19) :12478-12484
[8]   X-RAY PHOTOELECTRON-SPECTROSCOPY INVESTIGATION ON THE CHEMICAL-STRUCTURE OF AMORPHOUS-SILICON NITRIDE (A-SINX) [J].
INGO, GM ;
ZACCHETTI, N ;
DELLASALA, D ;
COLUZZA, C .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (05) :3048-3055
[9]   EXAMINATION OF THIN SIO2-FILMS ON SI USING SPECTROSCOPIC POLARIZATION MODULATION ELLIPSOMETRY [J].
JELLISON, GE .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (11) :7627-7634
[10]  
MITRA SS, 1985, HDB OPTICAL CONSTANT, V1, pCH11