Oxidation simulation of heavily phosphorus-doped silicon based on the interfacial silicon emission model

被引：5

作者：

Uematsu, M ^{[1
]}

Kageshima, H ^{[1
]}

Shiraishi, K ^{[1
]}

机构：

[1] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2001年 / 40卷 / 9A期

关键词：

silicon; oxidation; phosphorus; simulation; diffusion; interfacial silicon emission;

D O I：

10.1143/JJAP.40.5197

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon oxidation of heavily phosphorus-doped substrates is simulated based on the interfacial silicon emission model. We assume that double negatively charged vacancies (V2-) from the substrates reduce the interfacial silicon emission, which governs the oxidation rate at the interface. The simulation is done by reducing the rate of Si-atom emission according to the concentration of V2- estimated from the carrier concentration of the substrates. In addition, the equilibrium concentration of oxygen in the oxide is increased with increasing P concentration to fit the experimental oxide thickness.

引用

页码：5197 / 5200

页数：4

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