Oxidation simulation of heavily phosphorus-doped silicon based on the interfacial silicon emission model

被引：5
|
作者：
Uematsu, M [1 ]
Kageshima, H [1 ]
Shiraishi, K [1 ]
机构：
[1] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2001年 / 40卷 / 9A期
关键词：
silicon; oxidation; phosphorus; simulation; diffusion; interfacial silicon emission;
D O I：
10.1143/JJAP.40.5197
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Silicon oxidation of heavily phosphorus-doped substrates is simulated based on the interfacial silicon emission model. We assume that double negatively charged vacancies (V2-) from the substrates reduce the interfacial silicon emission, which governs the oxidation rate at the interface. The simulation is done by reducing the rate of Si-atom emission according to the concentration of V2- estimated from the carrier concentration of the substrates. In addition, the equilibrium concentration of oxygen in the oxide is increased with increasing P concentration to fit the experimental oxide thickness.
引用
收藏
页码：5197 / 5200
页数：4
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