B-site vacancy induced Raman scattering in BaTiO3-based ferroelectric ceramics

被引:92
作者
Veerapandiyan, Vignaswaran K. [1 ]
Khosravi, Saman [2 ]
Canu, Giovanna [3 ]
Feteira, Antonio [4 ]
Buscaglia, Vincenzo [3 ]
Reichmann, Klaus [2 ]
Deluca, Marco [1 ]
机构
[1] Mat Ctr Leoben Forsch GmbH, Roseggerstr 12, A-8700 Leoben, Austria
[2] Graz Univ Technol, Inst Chem & Technol Mat, A-8010 Graz, Austria
[3] CNR, Inst Condensed Matter Chem & Technol Energy, CNR ICMATE, Via Marini 6, I-16149 Genoa, Italy
[4] Sheffield Hallam Univ, Mat Engn & Res Inst, Sheffield S1 1WB, S Yorkshire, England
基金
奥地利科学基金会;
关键词
Raman spectroscopy; Vacancies; Heterovalent substitution; Charge-compensated ceramics; Lead-free ferroelectrics; RELAXOR FERROELECTRICS; TRANSITION; MECHANISMS; CRYSTALS; ORIGIN;
D O I
10.1016/j.jeurceramsoc.2020.05.051
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Defects, in particular vacancies, play a crucial role in substituted perovskite systems, influencing the structural features that underpin ferroelectricity. B-site vacancies introduce cation disorder in the perovskite lattice and are in fact one of the main driving forces for relaxor behaviour in barium titanate (BaTiO3, BT) based ferroelectrics. In this work, material systems are carefully selected to qualitatively study the change in B-site vacancy concentration for heterovalent substituted BT-based ferroelectric polycrystals. Raman spectroscopy was used to investigate those systems, and B-site vacancy specific Raman modes were identified unambiguously by comparison with charge-compensated BT, where B-site vacancies are absent. This study validates the hypothesis that vacancies induce Raman scattering because of symmetry breaking in the BT lattice, establishing this method as a vital tool to study substitutional defects in ceramic materials.
引用
收藏
页码:4684 / 4688
页数:5
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