Epitaxial growth of LaFeAs(O,F) thin films by molecular beam epitaxy

被引：6

作者：

Kawaguchi, T. ^{[1
,4
]}

Uemura, H. ^{[1
,4
]}

Ohno, T. ^{[1
,4
]}

Tabuchi, M. ^{[2
,4
]}

Ujihara, T. ^{[3
,4
]}

Takenaka, K. ^{[1
,4
]}

Takeda, Y. ^{[1
,4
]}

Ikuta, H. ^{[1
,4
]}

机构：

[1] Nagoya Univ, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, VBL, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[3] Nagoya Univ, Dept Mat Sci & Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[4] JST, Transformat Res Project Iron Pnictides TRIP, Chiyoda Ku, Tokyo 1020075, Japan

来源：

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2011年 / 471卷 / 21-22期

关键词：

Molecular beam epitaxy; Iron-based superconductor; LaFeAs(O; F); Epitaxial thin films;

D O I：

10.1016/j.physc.2011.05.151

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

LaFeAs(O,F) epitaxial thin films were grown on GaAs substrates by molecular beam epitaxy. Two films were grown with different growth time. The film grown for 1 h was single phase, but did not show a superconducting transition because of the absence of doped fluorine. On the other hand, the film grown for 6 h contained LaOF as an impurity, but showed a clear superconducting transition without the need of an ex situ heat treatment. The results of Hall coefficient and lattice constant measurements suggest that the superconducting film was sufficiently doped with fluorine although the transition temperature (T(c)) was rather low, implying that a further improvement in the film quality would increase T(c). (C) 2011 Elsevier B.V. All rights reserved.

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页码：1174 / 1176

页数：3

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