24 GHz low-noise amplifier in 0.18 μm CMOS technology

被引：8
|
作者：
Yu, KW [1 ]
Lu, YL
Huang, D
Chang, DC
Liang, V
Chang, MF
机构：
[1] Univ Calif Los Angeles, Dept Elect Engn, High Speed Elect Lab, Los Angeles, CA 90095 USA
[2] United Microelect Corp, Hsinchu 300, Taiwan
来源：
ELECTRONICS LETTERS | 2003年 / 39卷 / 22期
关键词：
D O I：
10.1049/el:20031042
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 24 GHz monolithic low-noise amplifier (LNA) is implemented in a standard 0.18 mum CMOS technology. Measurements show a gain of 12.86 dB and a noise figure of 5.6 dB at 23.5 GHz. The input and output return losses are better than I I dB and 22 dB across the 22-29 GHz span, respectively. The operation frequency of 24 GHz is believed to be the highest reported for LNA in a standard CMOS technology.
引用
收藏
页码：1559 / 1560
页数：2
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