24 GHz low-noise amplifier in 0.18 μm CMOS technology

被引：8

作者：

Yu, KW ^{[1
]}

Lu, YL

Huang, D

Chang, DC

Liang, V

Chang, MF

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, High Speed Elect Lab, Los Angeles, CA 90095 USA

[2] United Microelect Corp, Hsinchu 300, Taiwan

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 22期

关键词：

D O I：

10.1049/el:20031042

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 24 GHz monolithic low-noise amplifier (LNA) is implemented in a standard 0.18 mum CMOS technology. Measurements show a gain of 12.86 dB and a noise figure of 5.6 dB at 23.5 GHz. The input and output return losses are better than I I dB and 22 dB across the 22-29 GHz span, respectively. The operation frequency of 24 GHz is believed to be the highest reported for LNA in a standard CMOS technology.

引用

页码：1559 / 1560

页数：2