Field-assisted Shockley-Read-Hall recombinations in III-nitride quantum wells

被引：42

作者：

David, Aurelien ^{[1
]}

Hurni, Christophe A. ^{[1
]}

Young, Nathan G. ^{[1
]}

Craven, Michael D. ^{[1
]}

机构：

[1] Soraa Inc, 6500 Kaiser Dr, Fremont, CA 94555 USA

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 23期

关键词：

NONRADIATIVE CAPTURE; DEEP CENTERS; SEMICONDUCTORS; CARRIERS;

D O I：

10.1063/1.5003112

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The physical process driving low-current non-radiative recombinations in high-quality III-nitride quantum wells is investigated. Lifetime measurements reveal that these recombinations scale with the overlap of the electron and hole wavefunctions and show a weak temperature dependence, in contrast to common empirical expectations for Shockley-Read-Hall recombinations. A model of field-assisted multiphonon point defect recombination in quantum wells is introduced and shown to quantitatively explain the data. This study clarifies how III-nitride LEDs can achieve high efficiency despite the presence of strong polarization fields. Published by AIP Publishing.

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页数：5

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