Determination of small-signal parameters of GaN-based HEMTs

被引：46

作者：

Chigaeva, E ^{[1
]}

Walthes, W ^{[1
]}

Wiegner, D ^{[1
]}

Grözing, M ^{[1
]}

Schaich, F ^{[1
]}

Wieser, N ^{[1
]}

Berroth, M ^{[1
]}

Breitschädel, O ^{[1
]}

Kley, L ^{[1
]}

Kuhn, B ^{[1
]}

Scholz, F ^{[1
]}

Schweizer, H ^{[1
]}

Ambacher, O ^{[1
]}

Hilsenbeck, J ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Elect & Opt Commun Engn, D-70550 Stuttgart, Germany

来源：

2000 IEEE/CORNELL CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/CORNEL.2000.902526

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The small-signal equivalent circuit of AlGaN/GaN HEMT is discussed It is shown that an extremely high gate voltage has to be applied to correctly determine series resistances. Effects appearing at high forward gate voltages are discussed. Good agreement between measured and simulated data has been achieved.

引用

页码：115 / 122

页数：8

共 7 条

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