High rate deposition of microcrystalline silicon films using jet-type inductively coupled plasma chemical vapor deposition

被引：3

作者：

Zuo, Zewen ^{[1
,2
,3
]}

Wang, Yu ^{[1
,2
]}

Lu, Jin ^{[1
,2
]}

Wang, Junzhuan ^{[1
,2
]}

Pu, Lin ^{[1
,2
]}

Shi, Yi ^{[1
,2
]}

Zheng, Youdou ^{[1
,2
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engneering, Nanjing 210093, Jiangsu, Peoples R China

[2] Nanjing Univ, Key Lab Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China

[3] Anhui Normal Univ, Coll Phys & Elect Informat, Wuhu 241000, Peoples R China

来源：

VACUUM | 2012年 / 86卷 / 07期

关键词：

Microcrystalline silicon; Jet-ICPCVD; High rate; Low temperature; SOLAR-CELLS;

D O I：

10.1016/j.vacuum.2011.04.031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Microcrystalline silicon (mu c-Si) films were deposited at a high rate and low temperature using jet-type inductively coupled plasma chemical vapor deposition (jet-ICPCVD), and the deposition rate, microstructure and electrical properties of the deposited films were investigated. It was demonstrated that a high deposition rate of over 20 nm/s can be achieved while maintaining high crystallinity and low dark conductivity. The deposition rate is well controlled by regulating the generation rate and transport of growth precursors. High crystallinity of the films results principally from hydrogen-induced chemical annealing. Furthermore, the excellent electrical properties benefit from the low oxygen content and/or low deposition temperature. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：924 / 928

页数：5

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