Collapse of the excitonic states at rs=8 in high quality GaAs/AlGaAs single quantum wells.

被引：0

作者：

Gubarev, SI ^{[1
]}

Kukushkin, IV ^{[1
]}

Tovstonog, SV ^{[1
]}

Akimov, MY ^{[1
]}

Kulik, LV ^{[1
]}

Smet, J ^{[1
]}

von Klitzing, K ^{[1
]}

Wegscheider, W ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

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中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The collapse of the excitonic states due to a very low carrier density of 2D-channel has been studied in GaAs/AlGaAs single quantum well (SQW) as a function of carrier density for electron and hole channels. The collapse of exciton states in high quality GaAs/AlGaAs SQW have been observed at surprisingly low electron density n(e) = 5.10(9) cm(-2) which corresponds to dimensionelness parameter r(s) = 8. This value is in a dramatic contrast with a previous finding as well as with the value r(s) approximate to 2 found in the 3D electron system.

引用

页码：511 / 512

页数：2

共 5 条

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