Correlation between structure and photoluminescence of c-axis oriented nanocrystalline ZnO films and evolution of photo-generated excitons

被引:10
作者
Gao, Kun [1 ]
Li, Qian [1 ]
Hu, Zhigao [2 ]
Yu, Wenlei [2 ]
Sun, Jian [1 ]
Xu, Ning [1 ]
Wu, Jiada [1 ]
机构
[1] Fudan Univ, Key Lab Micro & Nano Photon Struct, Minist Educ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China
[2] E China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
基金
中国国家自然科学基金;
关键词
Zinc oxide; Nanocrystalline; Structure; Photoluminescence; Exciton; THIN-FILMS; PLASMA; NANOSTRUCTURES; SCATTERING; GROWTH; ARRAYS; GREEN; LAYER;
D O I
10.1016/j.solmat.2011.09.033
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The structural and photoluminescent properties as well as the evolution of photo-generated excitons were studied in combination with the effects of thermal annealing for c-axis oriented nanocrystalline zinc oxide (nc-ZnO) films on Si (100) prepared by plasma assisted reactive pulsed laser deposition. The extra energy and the reactive oxygen species provided by ECR oxygen plasma result in the low-temperature c-axis oriented growth of nc-ZnO with wurtzite structure and low density of oxygen vacancies in the grown ZnO. The annealing process leads to the improvement of crystallinity and the growth of crystallites at the expense of the introduction of oxygen vacancies. The prepared nc-ZnO films emit strong near band edge (NBE) photoluminescence (PL) associated with longitudinal optical (LO) phonon replicas of free and bound excitons at 325 nm light excitation at 7 K. The temperature-dependent PL features reveal the evolution of radiative recombination processes with temperature and indicate that the room-temperature NBE luminescence is dominated by the LO phonon replicas of free excitons, whereas inappreciable visible emission in the room-temperature PL from as-deposited nc-ZnO suggests low-density oxygen vacancies in the samples. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:117 / 123
页数:7
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