Fabrication and performance of sub-micron T-gate high-speed high-electron mobility transistors

被引：0

作者：

Weiner, JS ^{[1
]}

Kuo, JM ^{[1
]}

Lothian, JR ^{[1
]}

Wang, YC ^{[1
]}

Ren, F ^{[1
]}

Tsai, HS ^{[1
]}

Sivco, D ^{[1
]}

Cho, AY ^{[1
]}

Chen, YK ^{[1
]}

机构：

[1] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA

来源：

COMPOUND SEMICONDUCTOR POWER TRANSISTORS AND STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXIX) | 1998年 / 98卷 / 12期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A novel technique is described for fabricating submicron T-gates with asymmetric gate recess etch to improve breakdown voltage of FETs. This process only requires the addition of a simple bake step to the process for conventional sub-micron T-gates. Fabrication and performance of InP-based high-electron mobility transistors with conventional gate recess are described as well.

引用

页码：288 / 292

页数：5

共 50 条

[1] Fabrication of self-aligned T-gate AlGaN/GaN high electron mobility transistors
Lee, JS
Liu, DM
Kim, HN
Schuette, ML
Lu, W
Flynn, JS
Brandes, GR
HIGH PERFORMANCE DEVICES, PROCEEDINGS, 2005, : 181 - 185
[2] Submicron InGaAs/InAlAs/InP high-electron mobility transistors for high-speed lightwave applications
Weiner, JS
Wang, YC
Kuo, JM
Tsai, HS
Sivco, D
Cho, AY
Chen, YK
PROCEEDINGS OF THE STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXX), 1999, 99 (04): : 135 - 140
[3] POWER PERFORMANCE OF MICROWAVE HIGH-ELECTRON MOBILITY TRANSISTORS
SMITH, PM
MISHRA, UK
CHAO, PC
PALMATEER, SC
HWANG, JCM
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (02) : 86 - 87
[4] SUB-MICRON ELECTRON-TUNNELING JUNCTIONS WITH HIGH-SPEED RESPONSE AT INFRARED FREQUENCIES
JAVAN, A
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1980, 70 (06) : 617 - 617
[5] INTRINSIC LIMITATIONS ON THE HIGH-SPEED PERFORMANCE OF HIGH ELECTRON-MOBILITY TRANSISTORS
CHIU, LC
MARGALIT, S
YARIV, A
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1983, 22 (02): : L82 - L84
[6] Effect of material composition on noise performance of sub-micron high electron mobility transistor
Deyasi, Arpan
Sarkar, Angsuman
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2022, 28 (02): : 577 - 585
[7] Performance of Surface and Gate-Engineered AlGaAs/InGaAs Pseudomorphic High-Electron Mobility Transistors
Lin, Yu-Shyan
Liang, Shih-Kai
Lin, You-Song
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (06) : H401 - H408
[8] Effect of material composition on noise performance of sub-micron high electron mobility transistor
Arpan Deyasi
Angsuman Sarkar
Microsystem Technologies, 2022, 28 : 577 - 585
[9] Fabrication of 30nm T-gate high electron mobility transistors using a bi-layer of PMMA and UVIII
Boyd, E
Zhou, H
McLelland, H
Moran, DAJ
Thoms, S
Thayne, IG
Commad 04: 2004 Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, 2005, : 25 - 28
[10] HIGH-SPEED AND HIGH-POWER GALNASP/INP JUNCTION FIELD-EFFECT TRANSISTOR WITH SUB-MICRON GATE
FURUTSU, M
SUDO, H
SODA, H
ISHIKAWA, H
IMAI, H
ELECTRONICS LETTERS, 1988, 24 (12) : 733 - 735

← 1 2 3 4 5 →