High f(max) carbon-doped base InP/InGaAs heterojunction bipolar transistors grown by MOCVD

被引：4

作者：

Ito, H

Yamahata, S

Shigekawa, N

Kurishima, K

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01, 3-1, Morinosato Wakamiya

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 15期

关键词：

heterojunction bipolar transistors; chemical vapour deposition;

D O I：

10.1049/el:19960915

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report excellent microwave characteristics of C-doped base InP/InGaAs heterojunction bipolar transistors (HBTs) grown by metalorganic chemical vapour deposition (MOCVD). A combination of a low resistance base layer (2.5 x 10(19) cm(-3), 700 Angstrom) and a very narrow emitter mesa structure (0.5 x 4.7 mu m(2)) enabled us to achieve a record maximum oscillation frequency (f(max)) of 170 GHz at J(C) = 1.7 x 10(5) A/cm(2) for C-doped base InP/InGaAs HBTs.

引用

收藏

页码：1415 / 1416

页数：2

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