Microstructure and electrical properties of Sc2O3-doped ZnO-Bi2O3-based varistor ceramics

被引：61

作者：

Xu, Dong ^{[1
,2
]}

Cheng, Xiaonong ^{[1
]}

Zhao, Guoping ^{[1
]}

Yang, Juan ^{[1
]}

Shi, Liyi ^{[2
]}

机构：

[1] Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang 212013, Peoples R China

[2] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2011年 / 37卷 / 03期

基金：

中国博士后科学基金;

关键词：

B; Microstructure-final; C. Electrical properties; D; ZnO; E; Varistors; RARE-EARTH-OXIDES; SINTERING TEMPERATURE; ZNO VARISTORS; STABILITY; VOLTAGE;

D O I：

10.1016/j.ceramint.2010.09.032

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The microstructure and electrical properties of ZnO-Bi2O3-based varistor ceramics doped with different Sc2O3 content sintered at 1100 degrees C were investigated. The results showed that the nonlinear coefficient of the varistor ceramics with Sc2O3 were in the range of 18-54, the threshold voltage in the range of 250-332 V/mm, the leakage current in the range of 0.1-23.0 mu A, with addition of 0-1.00 mol% Sc2O3. The ZnO-Bi2O3-based varistor ceramics doped with Sc2O3 content of 0.12 mol% exhibited the highest nonlinearity, in which the nonlinear coefficient is 54, the threshold voltage and the leakage current is 278 V/mm and 2.9 mu A, respectively. The results confirmed that doping with Sc2O3 was a very promising route for the production of the higher nonlinear coefficient of ZnO-Bi2O3-based varistor ceramics, and determining the proper amounts of addition of Sc2O3 was of great importance. (C) 2010 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：701 / 706

页数：6

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