Structural and electrical characteristics of ZrO2-TiO2 thin films by sol-gel method

被引：17

作者：

Hsu, Cheng-Hsing ^{[1
]}

Tseng, Ching-Fang ^{[1
]}

Lai, Chun-Hung ^{[1
]}

Tung, Hsin-Han ^{[1
]}

Lin, Shih-Yao ^{[1
]}

机构：

[1] Natl United Univ, Dept Elect Engn, Kung Ching Li 36003, Miao Li, Taiwan

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2010年 / 175卷 / 02期

关键词：

Sol-gel method; ZrO2-TiO2 thin film; Electrical properties; ReRAM; RESISTIVE SWITCHING PROPERTIES; TEMPERATURE; DEPOSITION; TRANSITION; ZRTIO4;

D O I：

10.1016/j.mseb.2010.07.010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we investigated electrical properties and microstructures of ZrTiO4 (ZrO2-TiO2) thin films prepared by the sol-gel method on ITO substrates at different annealing temperatures. All films exhibited ZrTiO4 (1 1 1) and (1 0 1) orientations perpendicular to the substrate surface, and the grain size increased with increase in the annealing temperature. A low leakage current density of 2.06 x 10(-6) A/cm(2) was obtained for the prepared films. Considering the primary memory switching behavior of ZrTiO4, ReRAM based on ZrTiO4 shows promise for future nonvolatile memory applications. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：181 / 184

页数：4

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