Investigation of STDP mechanisms for memristor circuits

被引:21
作者
Babacan, Yunus [1 ]
Yesil, Abdullah [2 ]
Tozlu, Omer Faruk [3 ]
Kacar, Firat [4 ]
机构
[1] Erzincan Binali Yildirim Univ, Dept Elect & Elect Engn, Erzincan, Turkey
[2] Bandirma Onyedi Eylul Univ, Dept Elect & Elect Engn, Bandirma, Balikesir, Turkey
[3] Hitit Univ, Dept Elect & Elect Engn, Corum, Turkey
[4] Istanbul Univ Cerrahpasa, Dept Elect & Elect Engn, Istanbul, Turkey
关键词
Spike timing-dependent plasticity; STDP; Synaptic plasticity; Memristor; Non-linear resistor; EMULATOR CIRCUIT; SPICE MODEL;
D O I
10.1016/j.aeue.2022.154230
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Memristive systems have become popular as a research field after the experimental realization of a memristor by the HP Labs research team. Researchers have demonstrated the synaptic behavior of the memristor in addition to its nonlinear and nonvolatile characteristics. Synapses play an important role in the learning process and spiketiming-dependent plasticity (STDP) is a fundamental synaptic learning rule. Because of problems with finding the memristor on the market as a discrete circuit element, researchers have designed many types of memristor circuits to emulate memristors. However, no information is available about the STDP behavior of these designed memristor emulators. This paper investigated the STDP property of some basic memristor circuits and the mathematical and simulation results demonstrated that none of them could support the STDP learning rule.
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页数:8
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