Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

被引：262

作者：

Ji, Kwang Hwan ^{[1
]}

Kim, Ji-In ^{[1
]}

Jung, Hong Yoon ^{[1
]}

Park, Se Yeob ^{[1
]}

Choi, Rino ^{[1
]}

Kim, Un Ki ^{[2
,3
]}

Hwang, Cheol Seong ^{[2
,3
]}

Lee, Daeseok ^{[4
]}

Hwang, Hyungsang ^{[4
]}

Jeong, Jae Kyeong ^{[1
]}

机构：

[1] Inha Univ, Dept Mat Sci & Engn, Inchon 402751, South Korea

[2] Seoul Natl Univ, Dept Mat Sci & Engn, WCU Hybrid Mat Program, Seoul 151742, South Korea

[3] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea

[4] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 10期

关键词：

ZNO;

D O I：

10.1063/1.3564882

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Negative-bias illumination stress (NBIS) of amorphous InGaZnO (IGZO) transistors can cause a large negative shift (>7.1 V) in threshold voltage, something frequently attributed to the trapping of photoinduced hole carriers. This work demonstrates that the deterioration of threshold voltage by NBIS can be strongly suppressed by high-pressure annealing under 10 atm O-2 ambient. This improvement occurred through a reduction in oxygen vacancy defects in the IGZO film, indicating that a photoinduced transition from V-O to V-O(2+) was responsible for the NBIS-induced instability. (C) 2011 American Institute of Physics. [doi:10.1063/1.3564882]

引用

页数：3

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