Photoluminescence of Frank-type defects on the basal plane in 4H-SiC epilayers

被引：75

作者：

Kamata, Isaho ^{[1
]}

Zhang, Xuan ^{[1
]}

Tsuchida, Hidekazu ^{[1
]}

机构：

[1] Cent Res Inst Elect Power Ind, Kanagawa 2400196, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 17期

基金：

日本学术振兴会;

关键词：

EPITAXIAL-GROWTH; STACKING-FAULTS;

D O I：

10.1063/1.3499431

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Frank-type defects on the basal plane in thick 4H-SiC epitaxial layers have been characterized by photoluminescence (PL) spectroscopy and a PL imaging microscopy. The PL emission wavelength of the three kinds of Frank-type defects were determined at similar to 424, 457, and 488 nm at room temperature, respectively. The high-resolution PL imaging of the defects was obtained, and the PL emission at the Frank partial dislocations was confirmed in the near infrared region (>700 nm). Correspondence between the optical properties and the microscopic structures of the defects was clarified. (C) 2010 American Institute of Physics. [doi:10.1063/1.3499431]

引用

页数：3

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