Numerical model of carbon chemical vapor deposition at internal surfaces

被引:12
作者
Barua, Himel [1 ]
Povitsky, Alex [1 ]
机构
[1] Univ Akron, Dept Mech Engn, Akron, OH 44325 USA
关键词
Chemical vapor deposition; Low pressure reactor; Computational fluid dynamics; Voids; Carbon deposition; TRANSPORT PHENOMENA; SIMULATION; NANOTUBE; FILM;
D O I
10.1016/j.vacuum.2020.109234
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The objective of this study is to obtain the rate of Carbon deposition by low pressure chemical vapor deposition process (LPCVD) at internal surfaces to verify that large aspect ratio features can be filled. The mathematical model of LPCVD from reactor-scale to millimeter-scale channels is developed by using Computational Fluid Dynamics software ANSYS/FLUENT. To mimic voids in fibers' structure, the CVD rate is obtained along each drilled channel in the parallelepiped sample hanged along the reactor axis. The role of heating of feedstock gas in reactor is discussed. Numerical modeling shows that vortices are generated near entrances of each channel. These vortices partially block the flow of feedstock gas from entering into the channel. Because of higher growth rate of carbon near the entrances of channels and partial blockage of the flow toward the centers of channels, the centers of channels have less exposure to CVD reactants; therefore, the channels can be blocked before completion of CVD that might create voids in CVD-manufactured materials.
引用
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页数:13
相关论文
共 36 条
[21]  
Lazerand T., 2014, SILICON NITRIDE MEMS
[22]  
Lee H.-C., 1994, U.S. Patent, Patent No. [5,336,327, 53363279]
[23]   Model on transport phenomena and control of rod growth uniformity in siemens CVD reactor [J].
Li, Xue-Gang ;
Xiao, Wen-De .
COMPUTERS & CHEMICAL ENGINEERING, 2018, 117 :351-358
[24]   Grain-scale growth simulation of SiC film with the Chemical Vapor Deposition method [J].
Liu, Cuixia ;
Yang, Yanqing ;
Luo, Xian .
COMPUTATIONAL MATERIALS SCIENCE, 2012, 59 :128-132
[25]  
Martini Tech the microfabrication company, DEP RAT CHEM VAP DEP
[26]   ON THE 2D MODELING OF HORIZONTAL CVD REACTORS AND ITS LIMITATIONS [J].
OUAZZANI, J ;
CHIU, KC ;
ROSENBERGER, F .
JOURNAL OF CRYSTAL GROWTH, 1988, 91 (04) :497-508
[27]  
Park J.-H., 2001, SURFACE ENG SERIES, V2, P1
[28]  
Powell C.F., 1966, J ELECTROCHEM SOC, V113, p266c
[29]   Silicon solar cell production [J].
Ranjan, S. ;
Balaji, S. ;
Panella, Rocco A. ;
Ydstie, B. Erik .
COMPUTERS & CHEMICAL ENGINEERING, 2011, 35 (08) :1439-1453
[30]  
Singh S. S., PHYS SEMICONDUCTOR D