Various configurations of In nanostructures on GaAs (100) by droplet epitaxy

被引：19

作者：

Lee, Jihoon ^{[1
]}

Wang, Zhiming ^{[2
]}

Hirono, Yusuke ^{[2
]}

Kim, Eun-Soo ^{[1
]}

Kim, Namyoung ^{[1
]}

Park, Seunghyun ^{[1
]}

Wang, Cong ^{[1
]}

Salamo, G. J. ^{[2
]}

机构：

[1] Kwangwoon Univ, Dept Elect Engn, Seoul 139701, South Korea

[2] Univ Arkansas, Inst Nanoscale Sci & Engn, Fayetteville, AR 72701 USA

来源：

CRYSTENGCOMM | 2010年 / 12卷 / 11期

关键词：

QUANTUM DOTS; GROWTH METHOD; (311)A;

D O I：

10.1039/c0ce00057d

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In sharp contrast to the general belief in the round shape of In droplets, we report various configurations of In nanostructures. Various configurations of self-assembled In nanostructures are demonstrated by droplet epitaxy on GaAs (100) using molecular beam epitaxy. Square, rectangle, pentagonal geometries and elongated rod-like configurations are realized on GaAs (100). The formation of facets is clearly observed on the top and side of the In nanostructures. Co-existence of both round and square shapes of In nanostructures is captured, which shows the sharp transition between the two.

引用

页码：3404 / 3408

页数：5

共 29 条

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