Milliwatt-class non-polar a-plane InGaN/GaN light-emitting diodes grown directly on r-plane sapphire substrates

被引：7

作者：

Seo, Yong Gon ^{[1
,2
]}

Baik, Kwang Hyeon ^{[1
]}

Song, Keun-Man ^{[3
]}

Lee, Seokwoo ^{[4
]}

Yoon, Hyungdo ^{[1
]}

Park, Jae-Hyoun ^{[1
]}

Oh, Kyunghwan ^{[2
]}

Hwang, Sung-Min ^{[1
]}

机构：

[1] Korea Elect Technol Inst, Songnam 463816, Gyeonggi, South Korea

[2] Yonsei Univ, Seoul 120749, South Korea

[3] Korea Adv Nano Fab Ctr, Suwon 443270, Gyeonggi, South Korea

[4] Wavesquare Inc, Yongin 449863, Gyeonggi, South Korea

来源：

CURRENT APPLIED PHYSICS | 2010年 / 10卷 / 06期

关键词：

Non-polar; a-Plane; InGaN; Light-emitting diode; r-Plane sapphire; X-ray diffraction; GAN; ELECTROLUMINESCENCE; SI;

D O I：

10.1016/j.cap.2010.05.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Non-polar a-plane (11 (2) over bar0) light-emitting diodes (LEDs) in InGaN/GaN multiple quantum well structures were successfully fabricated by metal organic chemical vapor deposition (MOCVD) directly grown on r-plane (1 (1) over bar 20) sapphire substrates. The full width at half maximums (FWHMs) of the X-ray rocking curve (XRC) of an a-plane GaN template along the c-and m-axes were measured to be similar to 349 and similar to 533 arcsec, respectively. The optical output power and external quantum efficiency (EQE) at drive currents of 20 mA and 100 mA under direct current operation in on-wafer measurements were 1.24 mW, 2.4% and 100 mA, 1.7%, respectively. The a-plane LED showed 2.8 nm blue shift with change in drive current from 5 mA to 100 mA. The polarization ratio at room temperature was 0.4 and it indicates that the a-plane LED has polarization anisotropy. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1407 / 1410

页数：4

共 17 条

[1] Effect of misorientation angle of r-plane sapphire substrate on a-plane GaN grown by metalorganic vapor phase epitaxy [J].

Araki, Masahiro ;

Mochimizo, Noriaki ;

Hoshino, Katsuyuki ;

Tadatomo, Kazuyuki .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (01) :119-123

[2] A-plane GaN epitaxial lateral overgrowth structures: Growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy [J].

Bastek, B. ;

Bertram, F. ;

Christen, J. ;

Wernicke, T. ;

Weyers, M. ;

Kneissl, M. .

APPLIED PHYSICS LETTERS, 2008, 92 (21)

[3] Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak [J].

Chakraborty, A ;

Haskell, BA ;

Keller, S ;

Speck, JS ;

DenBaars, SP ;

Nakamura, S ;

Mishra, UK .

APPLIED PHYSICS LETTERS, 2004, 85 (22) :5143-5145

[4] Ultraviolet light emitting diodes using non-polar a-plane GaN-AlGaN multiple quantum wells [J].

Chen, CQ ;

Adivarahan, V ;

Yang, JW ;

Shatalov, M ;

Kuokstis, E ;

Khan, MA .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (9AB) :L1039-L1040

[5] Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire [J].

Chitnis, A ;

Chen, C ;

Adivarahan, V ;

Shatalov, M ;

Kuokstis, E ;

Mandavilli, V ;

Yang, J ;

Khan, MA .

APPLIED PHYSICS LETTERS, 2004, 84 (18) :3663-3665

[6] Improvements in a-plane GaN crystal quality by a two-step growth process [J].

Hollander, J. L. ;

Kappers, M. J. ;

McAleese, C. ;

Humphreys, C. J. .

APPLIED PHYSICS LETTERS, 2008, 92 (10)

[7] Demonstration of nonpolar a-plane InGaN/GaN light emitting diode on r-plane sapphire substrate [J].

Hwang, Sung-Min ;

Seo, Yong Gon ;

Baik, Kwang Hyeon ;

Cho, In-Sung ;

Baek, Jong Hyeob ;

Jung, Sukkoo ;

Kim, Tae Geun ;

Cho, Meoungwhan .

APPLIED PHYSICS LETTERS, 2009, 95 (07)

[8] Stability of (1(1)over-bar-00) m-plane GaN films grown by metalorganic chemical vapor deposition [J].

Imer, Bilge ;

Wu, Feng ;

Cravens, Michael D. ;

Speck, James S. ;

DenBaars, Steven P. .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (11) :8644-8647

[9] High brightness blue InGaN/GaN light emitting diode on nonpolar m-plane bulk GaN substrate [J].

Iso, Kenji ;

Yamada, Hisashi ;

Hirasawa, Hirohiko ;

Fellows, Natalie ;

Saito, Makoto ;

Fujito, Kenji ;

Denbaars, Steven P. ;

Speck, James S. ;

Nakamura, Shuji .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (36-40) :L960-L962

[10] Characteristics of Si and Mg doping in a-plane GaN grown on r-plane sapphire [J].

Lee, Sung-Nam ;

Paek, H. S. ;

Son, J. K. ;

Sakong, T. ;

Nam, O. H. ;

Park, Y. .

JOURNAL OF CRYSTAL GROWTH, 2007, 307 (02) :358-362

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