Characterization of BLT thin films using MgO buffer layer for MFIS-FET

被引：10

作者：

Kim, KT ^{[1
]}

Lee, JM ^{[1
]}

Song, SH ^{[1
]}

Kim, CI ^{[1
]}

机构：

[1] Chung Ang Univ, Sch Elect & Elect Engn, 221,Huksuk Dong, Seoul 156756, South Korea

来源：

THIN SOLID FILMS | 2005年 / 475卷 / 1-2期

关键词：

MFIS; BLT; MgO; memory window;

D O I：

10.1016/j.tsf.2004.08.029

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The BLT thin film and MgO buffer layer were fabricated using a metalorganic decomposition method and the DC sputtering technique. The MgO thin film was deposited as a buffer layer on SiO2/Si and Bi3.25La0.75Ti3O12 (BLT) thin films were used as a ferroelectric layer. The electrical of the metal ferroelectric insulator semiconductor (MFIS) structure were investigated by varying the Mao layer thickness. Transmission electron microscopy (TEM) shows no interdiffusion and reaction that suppressed by using the MgO film as a buffer layer. The width of the memory window in the C-V curves for the MFIS structure decreased with increasing thickness of the MgO layer. Leakage current density decreased by about three orders of magnitude after using MgO buffer layer. The results show that the BLT and MgO-based MFIS structure is suitable for non-volatile memory FETs with large memory window. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：166 / 170

页数：5

共 10 条

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