Dicyanodistyrylbenzene-Based Copolymers for Ambipolar Organic Field-Effect Transistors with Well-Balanced Hole and Electron Mobilities

被引:12
作者
Ryu, Hwa Sook [1 ]
Kim, Min Je [2 ,3 ]
Kang, Moon Sung [4 ]
Cho, Jeong Ho [2 ,3 ]
Woo, Han Young [1 ]
机构
[1] Korea Univ, Dept Chem, Seoul 136713, South Korea
[2] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 16419, South Korea
[3] Sungkyunkwan Univ, Dept Nano Engn, Suwon 16419, South Korea
[4] Soongsil Univ, Dept Chem Engn, Seoul 156743, South Korea
基金
新加坡国家研究基金会;
关键词
HIGH-PERFORMANCE AMBIPOLAR; POLYMER SOLAR-CELLS; CONJUGATED POLYMERS; ENHANCED EMISSION; N-TYPE; FABRICATION; MOLECULES;
D O I
10.1021/acs.macromol.8b01700
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
We report three types of dicyanodistyrylbenzene (DCS)-based copolymers (PBDT-DCS, PT-DCS, and PNDI-DCS), which present highly balanced ambipolar charge transport characteristics in organic field-effect transistors (OFETs). The introduction of the DCS moiety in a polymer backbone not only lowers the lowest unoccupied molecular orbital (LUMO) level but also increases the crystalline ordering via interchain dipole-dipole interactions. As a result, the LUMO levels for PBDT-DCS, PT-DCS, and PNDI-DCS were decreased to -3.76, -4.00, and -3.99 eV, respectively, which is beneficial for efficient electron injection from Au electrode for improving ambipolar charge transport. The determined hole/electron mobilities of the OFETs were 0.064/0.014, 0.492/0.181, and 0.420/0.447 cm(2)/(V s) for PBDT-DCS, PT-DCS, and PNDI-DCS, respectively, after thermal annealing at 250 degrees C. By incorporating the electron-deficient naphthalene diimide (NDI) unit in the copolymers, the n-channel transport was enhanced, with decreasing frontier molecular orbitals with enhanced electron injection and impeded hole injection from the Au electrode. Therefore, PNDI-DCS provided completely symmetric output curves in the positive and negative drain voltage regions with almost equivalent hole and electron mobilities. Benefiting from the balanced ambipolar feature of the PNDI-DCS OFETs, a complementary inverter was successfully fabricated.
引用
收藏
页码:8258 / 8267
页数:10
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