Electron energy-loss spectroscopy study of the electronic structure of boron nitride nanotubes

被引:62
|
作者
Terauchi, M [1 ]
Tanaka, M
Matsumoto, T
Saito, Y
机构
[1] Tohoku Univ, Sci Measurements Res Inst, Sendai, Miyagi 9808577, Japan
[2] Mie Univ, Fac Engn, Dept Elect & Elect Engn, Tsu, Mie 5148507, Japan
来源
JOURNAL OF ELECTRON MICROSCOPY | 1998年 / 47卷 / 04期
关键词
high energy-resolution EELS; boron nitride nanotube; pi plasmon; pi + sigma; plasmon; bandgap energy; boron 1s -> n* transition;
D O I
10.1093/oxfordjournals.jmicro.a023598
中图分类号
TH742 [显微镜];
学科分类号
摘要
Electron energy-loss spectra were obtained from single boron-nitride nanotubes (BNTs), which were synthesized by the are-discharge method. The pi: and pi + sigma plasmon energies of the BNTs were smaller than those of hexagonal boron-nitride (h-BN). The pi + sigma plasmon energy is explained by the surface plasmon excitation. Dielectric functions of the BNTs were derived from the loss functions by Kramers-Kronig analysis. The bandgap energy was obtained to be similar to 5 eV, which is smaller than that of h-BN of 5.8 eV, from the imaginary part of the dielectric function. Full width at half maximum (FWHM) value of the 1s --> pi* transition peak in boron It-shell excitation spectra was nearly the same as that of h-BN, whereas the FWHM value of the peak of carbon nanotubes was greater than that of graphite. No additional broadening of the peaks of the BNTs may be attributed to a weak interaction between the p(z) orbitals of adjacent boron and nitrogen atoms.
引用
收藏
页码:319 / 324
页数:6
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