Current-induced conditioning of hydrogenated amorphous carbon thin films for field emission

被引:1
作者
Carey, JD [1 ]
Silva, SRP [1 ]
机构
[1] Univ Surrey, Sch Elect Engn Informat Technol & Math, Guildford GU2 7XH, Surrey, England
基金
英国工程与自然科学研究理事会;
关键词
amorphous carbon; field emission; thin films; current stressing;
D O I
10.1016/S0925-9635(00)00543-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The field emission characteristics of hydrogenated amorphous carbon (a-C:H) thin films subjected to electrical current stressing have been examined. In these a-C:H films, deposited by radio frequency PECVD, an initially high, applied electric field (> 40 V mum(-1)) is sometimes required before the onset of electron emission. The threshold field in subsequent voltage cycles tend to converge after three or four cycles. By current stressing of the a-C:H films to different current levels it is shown that it is possible to remove the need for a conventional conditioning cycle. Measurements performed on unstressed films sometimes show that conditioning is required even after initial testing when samples are retested. In films, which have been current-stressed, the films remain fully conditioned even after 87 h after the original tests have been performed. The surface morphology of the current-stressed films is examined using atomic force microscopy and shows that the surface of the stressed area has been altered with three distinct regions present. The prime novelty of this work shows that conditioning of a-C:H films can be achieved through the use of current stressing. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:873 / 877
页数:5
相关论文
共 14 条
[1]  
Amaratunga GAJ, 1996, APPL PHYS LETT, V68, P2529, DOI 10.1063/1.116173
[2]   Growth and characterisation of amorphous carbon films doped with nitrogen [J].
Barradas, NP ;
Khan, RUA ;
Anguita, JV ;
Silva, SRP ;
Kreissig, U ;
Grötzschel, R ;
Möller, W .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 161 :969-974
[3]   Characterisation of defects in thin films of hydrogenated amorphous carbon [J].
Collins, M ;
Barklie, RC ;
Anguita, JV ;
Carey, JD ;
Silva, SRP .
DIAMOND AND RELATED MATERIALS, 2000, 9 (3-6) :781-785
[4]   A study of electron field emission as a function of film thickness from amorphous carbon films [J].
Forrest, RD ;
Burden, AP ;
Silva, SRP ;
Cheah, LK ;
Shi, X .
APPLIED PHYSICS LETTERS, 1998, 73 (25) :3784-3786
[5]   Effect of sp2-phase nanostructure on field emission from amorphous carbons [J].
Ilie, A ;
Ferrari, AC ;
Yagi, T ;
Robertson, J .
APPLIED PHYSICS LETTERS, 2000, 76 (18) :2627-2629
[6]   Diamond-based field-emission displays [J].
Jaskie, JE .
MRS BULLETIN, 1996, 21 (03) :59-64
[7]   Field emission conduction mechanisms in chemical vapor deposited diamond and diamondlike carbon films [J].
May, PW ;
Hohn, S ;
Wang, WN ;
Fox, NA .
APPLIED PHYSICS LETTERS, 1998, 72 (17) :2182-2184
[8]   Electron emission induced modifications in amorphous tetrahedral diamondlike carbon [J].
Mercer, TW ;
DiNardo, NJ ;
Rothman, JB ;
Siegal, MP ;
Friedmann, TA ;
Martinez-Miranda, LJ .
APPLIED PHYSICS LETTERS, 1998, 72 (18) :2244-2246
[9]   Mechanisms of electron field emission from diamond, diamond-like carbon, and nanostructured carbon [J].
Robertson, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (02) :659-665
[10]   Electron field emission from surface treated tetrahedral amorphous carbon films [J].
Shi, X ;
Cheah, LK ;
Tay, BK ;
Silva, SRP .
APPLIED PHYSICS LETTERS, 1999, 74 (06) :833-835