共 45 条
Controlling the Microstructure of Solution-Processable Small Molecules in Thin-Film Transistors through Substrate Chemistry
被引:65
作者:
Kline, R. Joseph
[1
]
Hudson, Steven D.
[1
]
Zhang, Xinran
[1
]
Gundlach, David J.
[2
]
Moad, Andrew J.
[3
]
Jurchescu, Oana D.
[4
]
Jackson, Thomas N.
[5
,6
]
Subramanian, Sankar
[7
]
Anthony, John E.
[7
]
Toney, Michael F.
[8
]
Richter, Lee J.
[3
]
机构:
[1] NIST, Div Polymers, Gaithersburg, MD 20899 USA
[2] NIST, Div Semicond Elect, Gaithersburg, MD 20899 USA
[3] NIST, Surface & Microanal Sci Div, Gaithersburg, MD 20899 USA
[4] Wake Forest Univ, Dept Phys, Winston Salem, NC 27106 USA
[5] Penn State Univ, Ctr Thin Film Devices, University Pk, PA 16802 USA
[6] Penn State Univ, Dept Elect Engn, Mat Res Inst, University Pk, PA 16802 USA
[7] Univ Kentucky, Dept Chem, Lexington, KY 40506 USA
[8] Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA 94025 USA
关键词:
organic electronics;
thin-film transistors;
grazing-incidence X-ray diffraction;
transmission electron microscopy;
FTIR;
TESADT;
crystal habits;
morphology;
SELF-ASSEMBLED MONOLAYERS;
HIGH-PERFORMANCE;
ORGANIC SEMICONDUCTORS;
PENTACENE FILMS;
CRYSTALLIZATION;
MORPHOLOGY;
DESIGN;
D O I:
10.1021/cm102834m
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Solution-processable small molecules have tremendous potential in macroelectronics applications by providing both high charge carrier mobility and low cost processing. Fluorinated 5,11-bis(triethylsilylethynl) anthradithiophene enables high performance thin film transistors due, in part, to a self-patterning process where crystals grow from chemically tailored contacts and bridge the transistor channel. This paper outlines a detailed microstructural study that identifies the crystallization mechanisms of the self-patterning. Two crystal habits are observed: we find that crystals on chemically modified electrodes predominantly form (001) oriented platelets while untreated surfaces form a fine mixture of (001) and (111) oriented crystals. For (001) oriented platelets, the (010) fast growth face lies in the plane of the film and allows extended growth from platelets nucleated on the electrode into the transistor channel. The in-plane charge carrier mobility of the (001) platelets is high; short channel lengths, crystal growth fronts from adjacent electrodes bridge the channel gap, resulting in the excellent device performance. On untreated surfaces between devices, the low charge carrier mobility, finely mixed state provides self-isolation for stable device operation.
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页码:1194 / 1203
页数:10
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