Co Silicide With Low Contact Resistivity Formed by Atomic Layer Deposited Cobalt and Subsequent Annealing

被引：2

作者：

Teng, Shih-Chieh ^{[1
]}

Liang, Zheng-Yong ^{[2
]}

Chou, Chuan-Pu ^{[1
]}

Tsai, Yu-Hsuan ^{[1
]}

Chiu, Po-Wen ^{[2
]}

Wu, Yung-Hsien ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 300, Taiwan

[2] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 01期

关键词：

Co silicide; ALD-Co; PVD-Co; contact resistivity; interface roughness; scattering;

D O I：

10.1109/LED.2019.2952921

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Co silicide on n(+) -Si substrate (N-D = 8 x 10(19) cm(-3)) formed by atomic layer deposition (ALD) Co deposition and subsequent rapid thermal annealing (RTA) was proposed as the contact silicide for aggressively scaled contact technology. ALD-Co silicide formed by RTA of 750 degrees C shows the best contact resistivity (rho(textc)) of 1.0 x 10(-8) Omega-cm(2) with crystallinity in CoSi2 phase, highly-oriented crystal structure and smooth surface. Compared to physical vapor deposition (PVD, sputter)-Co silicide, ALD-Co silicide shows greatly reduced rho(c) by 76 %. The major difference between ALD- and PVD-Co silicide is the interface roughness between silicide and Si substrate which is 1.004 nm and 2.645 nm respectively. The much reduced interface roughness stems from the atomically smooth Co deposition by ALD and it is the much smoother interface that makes less pronounced roughness induced scattering effect and consequently a lower rho(c). As the technology scales, contact silicide plays an essential role in determining parasitic resistance and ALD-Co silicide exhibits the great potential as the contact silicide beyond 5 nm technology node.

引用

页码：139 / 142

页数：4

共 12 条

[1] Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film [J].