Damage Threshold of Ni Thin Film by Terahertz Pulses

被引：15

作者：

Chefonov, O., V ^{[1
]}

Ovchinnikov, A., V ^{[1
]}

Evlashin, S. A. ^{[2
]}

Agranat, M. B. ^{[1
]}

机构：

[1] JIHT RAS, Izhorskaya 13 Bldg 2, Moscow 125412, Russia

[2] Skolkovo Inst Sci & Technol, Ctr Design Mfg & Mat, 3 Nobel St, Moscow 143026, Russia

来源：

JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES | 2018年 / 39卷 / 11期

基金：

俄罗斯科学基金会;

关键词：

Terahertz radiation; Thin films; Damage threshold; LASER; GENERATION; DSTMS;

D O I：

10.1007/s10762-018-0537-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Damage in a thin nickel film irradiated by subpicosecond pulses of terahertz (THz) radiation in the range of 1-3 THz at electric-field strengths up to 20 MV/cm at the center of a focal spot is observed. The damage threshold fluence is evaluated for single-pulse experiments. The damage pattern induced by multiple THz pulses has the appearance of a complex periodic structure in the form of elongated channels of metal film discontinuity that are perpendicular to the in-plane electric field direction of THz radiation.

引用

页码：1047 / 1054

页数：8

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