A study on the radiation hardness of lead tungstate crystals

被引:0
|
作者
Zhu, RY [1 ]
Deng, Q [1 ]
Newman, H [1 ]
Woody, CL [1 ]
Kierstead, JA [1 ]
Stoll, SP [1 ]
机构
[1] CALTECH, HEP, Pasadena, CA 91125 USA
关键词
D O I
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中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
This report presents recent progress of a study on the radiation damage in lead tungstate (PbWO4) crystals. The dose rate dependence of radiation damage in PbWO4 has been observed, confirming our early prediction based upon a kinetic model of color centers. An optimization of the oxygen compensation through post-growth thermal annealing, carried out in Shanghai Institute of Ceramics, has led to PbWO4 crystals with significantly improved radiation hardness. A comparison between front versus uniform irradiations revealed that the later caused a factor of 2 to 6 times more severe damage. A measurement of a preliminary batch of lanthanum doped PbWO4 crystals indicates that the La doping seems not a determine factor for PbWO4 radiation hardness improvement. Finally, a TEM/EDS analysis confirmed our previous conjecture that the radiation damage in PbWO4 crystals is caused by oxygen vacancies.
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收藏
页码:263 / 270
页数:8
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