Peltier effect in sub-micron-size metallic junctions

被引:25
作者
Fukushima, A
Yagami, K
Tulapurkar, AA
Suzuki, Y
Kubota, H
Yamamoto, A
Yuasa, S
机构
[1] Natl Inst Adv Ind Sci & Technol, AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
[2] Sony Corp, SSNC, Semicond Technol Dev Grp, Atsugi, Kanagawa 2430014, Japan
[3] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan
[4] Japan Sci & Technol Agcy, CREST, JST, Kawaguchi, Saitama 3320012, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 1-7期
关键词
Peltier effect; CPP-GMR; CPP structure; metallic junctions; current induced magnetization reversal;
D O I
10.1143/JJAP.44.L12
中图分类号
O59 [应用物理学];
学科分类号
摘要
Resistance (R)-current (I) curves in trilayer CPP-GMR (current perpendicular to plane-giant magnetoresistance) elements show a parabolic baseline because of Joule heating, and abrupt jumps due to magnetization reversals. The bottom of the parabolic baseline shifts in one current direction for reasons that were previously unclear. Our study of the R-I characteristics of CPP elements with various structures showed (i) the shift in the R-I curve originates from Peltier cooling in the CPP elements; (ii) the cooling power per unit area of the CPP elements (similar to 10(5) W/cm(2)) is much greater than that of conventional thermoelectric materials (similar to 5 W/cm(2)).
引用
收藏
页码:L12 / L14
页数:3
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