Fast Neutron Detection With 4H-SiC Based Diode Detector up to 500°C Ambient Temperature

In the framework of the European I-Smart project, optimal 4H-SiC based diode geometries were developed for high temperature neutron detection. Irradiation tests were conducted with 14 MeV fast neutrons supplied by a deuterium-tritium neutron generator with an average neutron yield of 4.04 x 10(10) - 5.25 x 10(10) n/s at Neutron Laboratory of the Technical University of Dresden in Germany. In this paper, we interpret the first measurements and results with 4H-SiC detector irradiated with fast neutrons from room temperature up to 500 degrees C. These experiments are serving also the first simulation of the harsh environmental condition measurements in the tritium breeding blanket of the ITER fusion reactor, which is one of the most prominent planned location of high temperature neutron flux characterization studies in the near future.