Synthesis and enhanced blue emission of Eu2+-doped GaN/SiO2 nanocomposites by addition of SiO2 nanoparticles

被引:1
作者
Kang, Bong Kyun [1 ]
Kim, Myung-Oh [1 ]
Yoon, Dae Ho [1 ,2 ]
机构
[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea
[2] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea
关键词
Semiconductors; Nanocomposites; FTIR; Luminescence; GROWTH TEMPERATURE; GAN; LUMINESCENCE; MORPHOLOGY; CONVERSION; NITRIDE; IONS; RED;
D O I
10.1016/j.matlet.2012.03.089
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The enhanced blue emission of Eu2+-doped GaN/SiO2 nanocomposites prepared through the nitridation process in an Ar environment containing 5% H-2 and NH3 gas at 1000 degrees C was investigated as a function of the amount of SiO2 nanoparticles added. The X-ray diffraction patterns indicate that the Eu2+-doped GaN/SiO2 nanocomposites consisted of a powder mixture of Eu2+-doped GaN and amorphous SiO2 particles. The back-scattering electron image and mapping data indicate that the SiO2 nanoparticles enclose the Eu2+-doped GaN nanoparticles to form aggregates. The red shifted peaks for the Ga-N bonds observed in the Fourier transform infrared spectra were attributed to the formation of GaOxNy and GaN intermediates. Strong emission and shoulder peaks of the Eu2+-doped GaN/SiO2 nanocomposites were observed at around 470 nm and 450 nm upon the addition of SiO2. respectively. The Eu2+-doped GaN/SiO2 nanocomposites showed the highest blue emission intensity at 0.15 mol% of SiO2 nanoparticles. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:170 / 172
页数:3
相关论文
共 21 条
  • [1] IR and Raman absorption spectroscopic studies of APCVD, LPCVD and PECVD thin SiN films
    Beshkov, G
    Lei, S
    Lazarova, V
    Nedev, N
    Georgiev, SS
    [J]. VACUUM, 2002, 69 (1-3) : 301 - 305
  • [2] Synthesis, characterization, and optical properties of ordered arrays of III-nitride nanocrystals
    Bhaviripudi, Sreekar
    Qi, Jifa
    Hu, Evelyn L.
    Belcher, Angela M.
    [J]. NANO LETTERS, 2007, 7 (11) : 3512 - 3517
  • [3] David MP, 2000, J MATER CHEM, V10, P1887
  • [4] Optical properties of the BaMgAl10O17:Eu2+ phosphor coated with SiO2 for a plasma display panel -: art. no. 191908
    Jung, IY
    Cho, Y
    Lee, SG
    Sohn, SH
    Kim, DK
    Lee, DK
    Kweon, YM
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (19) : 1 - 3
  • [5] Reaction intermediate(s) in the conversion of β-gallium oxide to gallium nitride under a flow of ammonia
    Jung, WS
    [J]. MATERIALS LETTERS, 2002, 57 (01) : 110 - 114
  • [6] Growth and Characteristics of Zinc-Blende and Wurtzite GaN Junctioned Branch Nanostructures
    Kang, Sammook
    Kang, Bong Kyun
    Kim, Sang-Woo
    Yoon, Dae Ho
    [J]. CRYSTAL GROWTH & DESIGN, 2010, 10 (06) : 2581 - 2584
  • [7] Luminescence properties of Eu2+-activated alkaline-earth silicon-oxynitride MSi2O2-δN2+2/3δ (M = Ca, Sr, Ba):: A promising class of novel LED conversion phosphors
    Li, YQ
    Delsing, ACA
    de With, G
    Hintzen, HT
    [J]. CHEMISTRY OF MATERIALS, 2005, 17 (12) : 3242 - 3248
  • [8] Effect of growth temperature on morphology, structure and luminescence of Eu-doped GaN thin films
    Liu, QL
    Bando, Y
    Xu, FF
    Tang, CC
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (21) : 4890 - 4892
  • [9] Fabrication of amorphous phase encrusted oxynitride phosphor with white-light emission via in situ penetration
    Mao, Zhi-yong
    Zhu, Ying-chun
    Gan, Lin
    Xu, Fang-fang
    Wang, Yang
    Wang, Da-jian
    [J]. JOURNAL OF MATERIALS CHEMISTRY, 2012, 22 (03) : 824 - 826
  • [10] Valence transition of Eu ions in GaN near the surface
    Maruyama, T
    Morishima, S
    Bang, H
    Akimoto, K
    Nanishi, Y
    [J]. JOURNAL OF CRYSTAL GROWTH, 2002, 237 : 1167 - 1171