The Goldschmidt's Tolerance Factor is a reliable figure of merit or empirical index to forecast the formation of preferred and stable structures and phases with ABX(3) hybrid organic-inorganic perovskite tolerance factors in the range of 0.9 to 1. Here, we probe perovskites of compositional variations ABX(3) with tolerance factors in the range of 0.9 to 1.0, and a large effective ionic radius greater than 200 pm. We report on the structural and optical properties of hybrid perovskite halides for photovoltaic (PV) applications, MAPbI(3), FA(0.8)MA(0.1)Cs(0.1)Pb(I0.86Br0.14)(3), and FA(0.8)Cs(0.2)Pb(I0.86Br0.14)(3), with tolerance factors of 0.91, 0.964 and 0.967 respectively. PV devices were fabricated using these high tolerance factor hybrid perovskite halides. We report we have achieved power conversion efficiencies (PCEs) greater than 21% using the high tolerance factor perovskites investigated. Note, the high PCEs reflect unusually high Jsc's which may be due to lack of equipment calibration and will be further investigated.
机构:
Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Gan, Lu
He, Haiping
论文数: 0引用数: 0
h-index: 0
机构:
Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
He, Haiping
Li, Shuoxing
论文数: 0引用数: 0
h-index: 0
机构:
Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Li, Shuoxing
Li, Jing
论文数: 0引用数: 0
h-index: 0
机构:
Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Li, Jing
Ye, Zhizhen
论文数: 0引用数: 0
h-index: 0
机构:
Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
机构:
Natl Phys Lab, Elect Mat Div, New Delhi 110012, IndiaNatl Phys Lab, Elect Mat Div, New Delhi 110012, India
Sharma, S. N.
Kumar, U.
论文数: 0引用数: 0
h-index: 0
机构:
Natl Phys Lab, Elect Mat Div, New Delhi 110012, India
Univ Delhi, Dept Chem, Delhi 110007, IndiaNatl Phys Lab, Elect Mat Div, New Delhi 110012, India
Kumar, U.
Vats, T.
论文数: 0引用数: 0
h-index: 0
机构:
Natl Phys Lab, Elect Mat Div, New Delhi 110012, India
Guru Gobind Singh Indraprastha Univ, Univ Sch Basic & Appl Sci, Delhi 110403, IndiaNatl Phys Lab, Elect Mat Div, New Delhi 110012, India
Vats, T.
论文数: 引用数:
h-index:
机构:
Arora, M.
Singh, V. N.
论文数: 0引用数: 0
h-index: 0
机构:
Indian Inst Technol, Dept Phys, New Delhi 110016, IndiaNatl Phys Lab, Elect Mat Div, New Delhi 110012, India
Singh, V. N.
Mehta, B. R.
论文数: 0引用数: 0
h-index: 0
机构:
Indian Inst Technol, Dept Phys, New Delhi 110016, IndiaNatl Phys Lab, Elect Mat Div, New Delhi 110012, India
Mehta, B. R.
Jain, K.
论文数: 0引用数: 0
h-index: 0
机构:
Natl Phys Lab, Elect Mat Div, New Delhi 110012, IndiaNatl Phys Lab, Elect Mat Div, New Delhi 110012, India
Jain, K.
Kakkar, R.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Delhi, Dept Chem, Delhi 110007, IndiaNatl Phys Lab, Elect Mat Div, New Delhi 110012, India
Kakkar, R.
Narula, A. K.
论文数: 0引用数: 0
h-index: 0
机构:
Guru Gobind Singh Indraprastha Univ, Univ Sch Basic & Appl Sci, Delhi 110403, IndiaNatl Phys Lab, Elect Mat Div, New Delhi 110012, India
机构:
Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Gan, Lu
He, Haiping
论文数: 0引用数: 0
h-index: 0
机构:
Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
He, Haiping
Li, Shuoxing
论文数: 0引用数: 0
h-index: 0
机构:
Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Li, Shuoxing
Li, Jing
论文数: 0引用数: 0
h-index: 0
机构:
Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Li, Jing
Ye, Zhizhen
论文数: 0引用数: 0
h-index: 0
机构:
Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
机构:
Natl Phys Lab, Elect Mat Div, New Delhi 110012, IndiaNatl Phys Lab, Elect Mat Div, New Delhi 110012, India
Sharma, S. N.
Kumar, U.
论文数: 0引用数: 0
h-index: 0
机构:
Natl Phys Lab, Elect Mat Div, New Delhi 110012, India
Univ Delhi, Dept Chem, Delhi 110007, IndiaNatl Phys Lab, Elect Mat Div, New Delhi 110012, India
Kumar, U.
Vats, T.
论文数: 0引用数: 0
h-index: 0
机构:
Natl Phys Lab, Elect Mat Div, New Delhi 110012, India
Guru Gobind Singh Indraprastha Univ, Univ Sch Basic & Appl Sci, Delhi 110403, IndiaNatl Phys Lab, Elect Mat Div, New Delhi 110012, India
Vats, T.
论文数: 引用数:
h-index:
机构:
Arora, M.
Singh, V. N.
论文数: 0引用数: 0
h-index: 0
机构:
Indian Inst Technol, Dept Phys, New Delhi 110016, IndiaNatl Phys Lab, Elect Mat Div, New Delhi 110012, India
Singh, V. N.
Mehta, B. R.
论文数: 0引用数: 0
h-index: 0
机构:
Indian Inst Technol, Dept Phys, New Delhi 110016, IndiaNatl Phys Lab, Elect Mat Div, New Delhi 110012, India
Mehta, B. R.
Jain, K.
论文数: 0引用数: 0
h-index: 0
机构:
Natl Phys Lab, Elect Mat Div, New Delhi 110012, IndiaNatl Phys Lab, Elect Mat Div, New Delhi 110012, India
Jain, K.
Kakkar, R.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Delhi, Dept Chem, Delhi 110007, IndiaNatl Phys Lab, Elect Mat Div, New Delhi 110012, India
Kakkar, R.
Narula, A. K.
论文数: 0引用数: 0
h-index: 0
机构:
Guru Gobind Singh Indraprastha Univ, Univ Sch Basic & Appl Sci, Delhi 110403, IndiaNatl Phys Lab, Elect Mat Div, New Delhi 110012, India